2kbp005m thru 2kbp10m, 3n253 thru 3n259 vishay general semiconductor document number: 88532 revision: 15-apr-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 glass passivated single-phase bridge rectifier features ? ul recognition file number e54214 ? ideal for printed circuit board ? high surge current capability ? high case dielectric strength ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications general purpose use in ac-to-dc bridge full wave rectification for switch ing power supply, home appliances, office equipment, and telecommunication applications. mechanical data case: kbpm epoxy meets ul 94v-0 flammability rating terminals: silver plated lead s, solderable per j-std-002 and jesd22-b102 e4 suffix for consumer grade polarity: as marked on body e4 primary characteristics i f(av) 2 a v rrm 50 v to 1000 v i fsm 60 a i r 5 a v f 1.1 v t j max. 165 c case style kbpm +~ ~? + ~ ~ ? maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 2kbp 005m 2kbp 01m 2kbp 02m 2kbp 04m 2kbp 06m 2kbp 08m 2kbp 10m unit 3n253 3n254 3n255 3n256 3n257 3n258 3n259 maximum repetitive peak reverse voltage v rrm 50 100 200 400 600 800 1000 v maximum rms voltage v rms 35 70 140 280 420 560 700 v maximum dc blocking voltage v dc 50 100 200 400 600 800 1000 v max. average forward output rectified current at t a = 55 c i f(av) 2.0 a peak forward surge current single half sine-wave superimposed on rated load i fsm 60 a rating for fusing (t < 8.3 ms) i 2 t 15 a 2 s operating junction and storage temperature range t j , t stg - 55 to + 165 c
2kbp005m thru 2kbp 10m, 3n253 thru 3n259 vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88532 revision: 15-apr-08 2 note: (1) thermal resistance from junction to ambi ent and from junction to lead mounted on p. c.b. with, 0.47 x 0.47" (12 x 12 mm) copp er pads ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol 2kbp 005m 2kbp 01m 2kbp 02m 2kbp 04m 2kbp 06m 2kbp 08m 2kbp 10m unit 3n253 3n254 3n255 3n256 3n257 3n258 3n259 maximum instantaneous forward voltage drop per diode 3.14 a v f 1.1 v maximum dc reverse current at rated dc blocking voltage per diode t a = 25 c t a = 125 c i r 5.0 500 a typical junction capacitance per diode 4.0 v, 1 mhz c j 25 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol 2kbp 005m 2kbp 01m 2kbp 02m 2kbp 04m 2kbp 06m 2kbp 08m 2kbp 10m unit 3n253 3n254 3n255 3n256 3n257 3n258 3n259 typical thermal resistance (1) r ja r jl 30 11 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode 2kbp06m-e4/45 1.895 45 30 tube 2kbp06m-e4/51 1.895 51 600 anti-static pvc tray 3n257-e4/45 1.895 45 30 tube 3n257-e4/51 1.895 51 600 anti-static pvc tray figure 1. derating curve output rectified current 20 40 60 8 0 100 120 140 160 170 0 0.5 1.0 1.5 2.0 capaciti v e load 5.0 10 20 = i (pk) i (a v ) (per leg) p. c . b . m o u nted w ith 0.47 x 0.47" (12 x 12 mm) copper pads 60 hz resisti v e or ind u cti v e load am b ient temperat u re (c) a v erage for w ard o u tp u t c u rrent (a) figure 2. maximum non-repetitive peak forward surge current per diode 1 10 100 0 10 20 30 40 50 60 t j = 150 c single sine- w a v e nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) 1.0 cycle
2kbp005m thru 2kbp10m, 3n253 thru 3n259 vishay general semiconductor document number: 88532 revision: 15-apr-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical forward characteristics per diode figure 4. typical reverse leak age characteristics per diode 0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 0.01 0.1 1 10 100 t j = 25 c p u lse w idth = 300 s 1 % d u ty cycle instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) 0 20 40 60 8 0 100 0.01 0.1 1 10 100 percent of rated peak re v erse v oltage (%) instantaneo u s re v erse c u rrent ( a) t j = 100 c t j = 125 c t j = 25 c figure 5. typical juncti on capacitance per diode 0.1 1 10 100 1 10 100 re v erse v oltage ( v ) j u nction capacitance (pf) t j = 25 c f = 1.0 mhz v sig = 50 m v p-p polarity sho w n on front side of case: positi v e lead b y b e v eled corner 0.125 x 45 (3.2) 0.600 (15.24) 0.560 (14.22) 0.034 (0. 8 6) 0.02 8 (0.76) 0.105 (2.67) 0.0 8 5 (2.16) 0.160 (4.1) 0.140 (3.6) 0.060 (1.52) 0.460 (11.6 8 ) 0.50 (12.7) mi n . 0.420 (10.67) 0.500 (12.70) 0.460 (11.6 8 ) 0.60 (15.2) mi n . dia. 0.200 (5.0 8 ) 0.1 8 0 (4.57) case style kbpm
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